INDIUM-PHOSPHIDE ON GALLIUM-ARSENIDE HETEROEPITAXY WITH INTERFACE LAYER GROWN BY FLOW-RATE MODULATION EPITAXY

被引：12
|
作者：
CHEN, WK
CHEN, JF
CHEN, JC
KIM, HM
ANTHONY, L
WIE, CR
LIU, PL
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期
关键词：
D O I：
10.1063/1.101795
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：749 / 751
页数：3
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