TEMPERATURE-DEPENDENCE OF GAAS/ALGAAS MULTIQUANTUM BARRIER LASERS

被引：7

作者：

TAKAGI, T ^{[1
]}

IGA, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 12期

关键词：

D O I：

10.1109/68.180563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This is the first report of a GaAs / AlGaAs laser loaded by a multiquantum barrier (MQB); its temperature-threshold characteristic has been systematically examined. It has been found that this characteristic is improved by introducing the MQB, and the improvement well reflects the barrier height. The actual barrier height of an MQB-loaded structure under biased conditions is also discussed, considering Fermi level in the MQB region.

引用

页码：1322 / 1324

页数：3

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