WEAK LOCALIZATION AND ELECTRON-ELECTRON INTERACTION IN THE LAYERED COMPOUND CuFeTe2

被引：0
|
作者：
Rivas-Mendoza, A. [1 ]
Gonzalez-Jimenez, F. [2 ]
Broto, J. M. [3 ]
Rakotob, H. [4 ]
Gonzalez, J. [4 ]
机构：
[1] Univ Carabobo, Dept Fis, Valencia, Venezuela
[2] UCV, Dpto Fis, Lab Magnetismo, Caracas, Venezuela
[3] Univ Toulouse, UPS, INSA, CNRS UPR 3228,Lab Natl Champs Magnetiques Intense, F-31400 Toulouse, France
[4] ULA, Dept Fis, Merida, Venezuela
来源：
REVISTA CUBANA DE FISICA | 2011年 / 28卷 / 01期
关键词：
Localization effects 72.15. Rn; Hopping transport 72.20. Ee; Weak localization 73.20. Fz; Spin-density waves;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The study of the electrical properties of the layered compound CuFeTe2 shows that there are three well differentiated conduction regimes depending on the temperature. Below TSDW similar to 300 K the formation of a Spin Density Wave (SDW) state has been reported, in the frame of a metal to non metal transition. Below 100 K (similar to TSDW/3) the behavior of the electrical resistance as a function of temperature and magnetic, eld is attributable to the still present not condensed electrons (quasi particles) in the SDW state. At low temperatures (1.8 - 20K), low current (< 1 mA) and magnetic, eld (0<H <6 Tesla), the effects of weak localization and electronic interactions in two dimensions appear. At intermediate temperatures (20 < T < 100 K) a hopping conductivity behavior is observed.
引用
收藏
页码：14 / 17
页数：4
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