PHOTOLUMINESCENCE FROM ELECTRON-HOLE PLASMAS CONFINED IN SI/SI1-XGEX/SI QUANTUM-WELLS

被引：53
|
作者：
XIAO, X [1 ]
LIU, CW [1 ]
STURM, JC [1 ]
LENCHYSHYN, LC [1 ]
THEWALT, MLW [1 ]
机构：
[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 14期
关键词：
D O I：
10.1063/1.107196
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.
引用
收藏
页码：1720 / 1722
页数：3
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