共 50 条
- [41] EFFECT OF ULTRASOUND TREATMENT ON VOLT-AMPERE AND NOISE CHARACTERISTICS OF TUNNEL-DIODES FROM GAAS PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (16): : 1009 - 1013
- [43] INTERELECTRON COLLISION EFFECT ON VOLT-AMPERE CHARACTERISTICS OF SEMICONDUCTOR IN LONGITUDINAL QUANTIZING MAGNETIC-FIELD FIZIKA TVERDOGO TELA, 1980, 22 (02): : 539 - 543
- [44] EFFECT OF HETEROGENEITIES ON THE DYNAMIC VOLT-AMPERE CHARACTERISTICS OF AN MIS STRUCTURE MEASURED IN THE SEMICONDUCTOR BREAKDOWN MODE SOVIET MICROELECTRONICS, 1989, 18 (05): : 259 - 266
- [45] CAUSE OF HIGH-VOLTAGE CHARACTERISTICS AT INITIAL DISCHARGE STATE OF 1.5 VOLT TYPE LITHIUM CELLS DENKI KAGAKU, 1982, 50 (08): : 708 - 709
- [46] Influence of symmetry of electronic states of high-temperature superconductors on volt-ampere characteristics of SIS contacts Zhurnal Eksperimental'noj i Teoreticheskoj Fiziki, 2002, 121 (02): : 453 - 462
- [49] EFFECT OF THE DISTANCE BETWEEN THE ELECTRODES AND GEOMETRY OF THE NON-CONSUMABLE ELECTRODE ON THE VOLT-AMPERE CHARACTERISTICS OF THE ARC WELDING PRODUCTION, 1982, 29 (08): : 14 - 16
- [50] EFFECT OF AUTO-EMISSION MEASUREMENTS ON THE SHAPE OF VOLT-AMPERE CHARACTERISTICS OF GERMANIUM SINGLE-CRYSTALS FIZIKA TVERDOGO TELA, 1979, 21 (10): : 3130 - 3132