TRIMETHYLGALLIUM SUPPLY WITHOUT THE USE OF BUBBLING IN GAAS GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY

被引：0
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作者：
OHUCHI, A
OHNO, H
OHTSUKA, S
HASEGAWA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 12期
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D O I：
10.1143/JJAP.27.2420
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2420 / 2420
页数：1
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