INTERFACE STATE DENSITY AT THE CONTACT OF FERROELECTRIC NANO2 AND SILICON

被引：1

作者：

SCHULZ, J ^{[1
]}

KOCH, S ^{[1
]}

WURFEL, P ^{[1
]}

RUPPEL, W ^{[1
]}

THIEMANN, U ^{[1
]}

VONMUNCH, W ^{[1
]}

机构：

[1] UNIV STUTTGART,INST HALBLEITERTECH,W-7000 STUTTGART 80,GERMANY

来源：

FERROELECTRICS | 1989年 / 99卷

关键词：

D O I：

10.1080/00150198908221441

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：87 / 100

页数：14

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