INTERFACE STATE DENSITY AT THE CONTACT OF FERROELECTRIC NANO2 AND SILICON

被引：1
|
作者：
SCHULZ, J [1 ]
KOCH, S [1 ]
WURFEL, P [1 ]
RUPPEL, W [1 ]
THIEMANN, U [1 ]
VONMUNCH, W [1 ]
机构：
[1] UNIV STUTTGART,INST HALBLEITERTECH,W-7000 STUTTGART 80,GERMANY
来源：
FERROELECTRICS | 1989年 / 99卷
关键词：
D O I：
10.1080/00150198908221441
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：87 / 100
页数：14
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