THE EFFECTS OF BASE DOPANT DIFFUSION ON DC AND RF CHARACTERISTICS OF INGAAS/INALAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：25
|
作者：
HAFIZI, M
METZGER, RA
STANCHINA, WE
RENSCH, DB
JENSEN, JF
HOOPER, WW
机构：
[1] Hughes Research Laboratories, Malibu, CA
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期
关键词：
D O I：
10.1109/55.144990
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBT's with thin base thicknesses and high base dopings are reported. It is shown that HBT's with compositionally graded emitter-base (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region. The RF performance is nearly unaffected by the diffusion and the dc current gain and E-B junction breakdown voltage are improved with finite Be diffusion into the E-B graded region.
引用
收藏
页码：140 / 142
页数：3
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