CORRELATION BETWEEN CAPACITANCE DEEP LEVEL MEASUREMENTS AND LOW-FREQUENCY NOISE IN INP SCHOTTKY DIODES

被引：0
|
作者：
WHITE, AM [1 ]
GRANT, AJ [1 ]
DAY, B [1 ]
机构：
[1] ROYAL RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期
关键词：
D O I：
10.1109/T-ED.1978.19333
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1354 / 1354
页数：1
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