MULTISTEP REPEATED ANNEALING FOR CZ-SILICON WAFERS - OXYGEN AND INDUCED DEFECT BEHAVIOR

被引：25
|
作者：
SHIMURA, F
TSUYA, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 09期
关键词：
D O I：
10.1149/1.2124375
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2089 / 2095
页数：7
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