MANY-BODY EFFECTS AND THE ELECTRON-MOBILITY IN SI INVERSION-LAYERS AT ROOM-TEMPERATURE

被引：4
|
作者：
NAKAMURA, K
WATANABE, K
EZAWA, H
机构：
来源：
SURFACE SCIENCE | 1980年 / 98卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(80)90495-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：202 / 209
页数：8
相关论文
共 50 条
  • [21] ELECTRON-MOBILITY OF (100) SILICON INVERSION-LAYERS - THE BORN APPROXIMATION FOR ELECTRICAL NEUTRAL SCATTERING
    NACHEV, I
    VELCHEV, N
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (31): : 5657 - 5662
  • [22] ELECTRON-MOBILITY OF GAXIN1-XSB AT ROOM-TEMPERATURE
    BARJON, D
    RAYMOND, A
    JOULLIE, A
    ROBERT, JL
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 76 (02): : 623 - 627
  • [23] MANY-BODY EFFECTS ON 4-FOLD DEGENERATE SUBBANDS IN SI INVERSION LAYERS
    VINTER, B
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 342 - 342
  • [24] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS
    EZAWA, H
    KAWAJI, S
    NAKAMURA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 126 - 155
  • [25] Temperature dependence of electron mobility in Si inversion layers
    Masaki, Kazuo
    Taniguchi, Kenji
    Hamaguchi, Chihiro
    Wase, Masao
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (11 A): : 2734 - 2739
  • [26] STUDIES OF ELECTRON SCREENING EFFECTS ON ELECTRON-MOBILITY IN SILICON SURFACE INVERSION LAYERS
    SHIUE, CC
    SAH, CT
    SURFACE SCIENCE, 1976, 58 (01) : 153 - 161
  • [27] EFFECTS OF A STAIRCASE ON MINIGAPS IN SI INVERSION-LAYERS
    OHKAWA, FJ
    PHYSICAL REVIEW B, 1981, 24 (12): : 7297 - 7303
  • [28] MANY-BODY THEORY OF ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN BULK SEMICONDUCTORS
    LOWENAU, JP
    REICH, FM
    GORNIK, E
    PHYSICAL REVIEW B, 1995, 51 (07): : 4159 - 4165
  • [29] Many-body theory of room-temperature optical nonlinearities in bulk semiconductors
    Loewenau, J. P.
    Reich, F. M.
    Gornik, E.
    Physical Review B: Condensed Matter, 51 (07):
  • [30] CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS
    STERN, F
    PHYSICAL REVIEW LETTERS, 1980, 44 (22) : 1469 - 1472
12345