THE DISTRIBUTION OF HYDROGEN AND SIOX AT THE SI/SIO2 INTERFACE

被引：0
|
作者：
HECHT, MH [1 ]
GRUNTHANER, PJ [1 ]
GRUNTHANER, FJ [1 ]
机构：
[1] CALTECH,JET PROP LAB,PASADENA,CA 91109
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C109 / C109
页数：1
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