The preparation and properties of PZT thin film by sputtering method

被引：0
|
作者：
Chen, HT
Yu, DW
Dong, XL
Duan, N
Wang, YL
机构：
[1] Shanghai Institute of Ceramics, Shanghai,200050
来源：
FERROELECTRICS LETTERS SECTION | 1995年 / 20卷 / 1-2期
关键词：
D O I：
10.1080/07315179508204724
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The ferroelectric PZT thin films were prepared on Pt/Ti/SiO2/Si substrate by RF sputtering method followed by the rapid thermal annealing. The preparation of the Pt and Ti thin films as bottom electrode, and their influences on the PZT thin films were studied in details. The substrate temperature during sputtering was room temperature; the rapid thermal annealing temperature was 500 degrees C-750 degrees C and the annealing time, was 30-70s. The influences of different preparation parameters on the structure and electric properties were studied with X-ray diffraction technique and RT66A Standardized Ferroelectric Test System. The electric properties of the prepared PZT thin film was: P-s=39 mu c/cm(2), P-r=9.3 mu c/cm(2), E(c)=28KV/mm, epsilon=300, p=10(9) Omega . cm.
引用
收藏
页码：35 / 40
页数：6
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