PHYSICAL UNDERSTANDING AND OPTIMUM DESIGN OF HIGH-POWER MILLIMETER-WAVE PULSED IMPATT DIODES

被引：12
|
作者：
ROLLAND, PA
DALLE, C
FRISCOURT, MR
机构：
[1] Centre Hyperfrequences et Semiconducteurs, Universite des Sciences et Techniques de Lille-Flandres-Artois, 59 655, Villeneuve d'Ascq Cedex
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 05期
关键词：
D O I：
10.1109/55.79563
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The purpose of this paper is a physical understanding of the specific mode of operation of high-power millimeter-wave pulsed IMPATT diodes, derived from a self-consistent numerical model. The theoretical results fit well with recently published experimental findings, and thus allow an optimum design of the 94-GHz IMPATT structure for peak output power in excess of 50 W under low duty cycle.
引用
收藏
页码：221 / 223
页数：3
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