STRUCTURE AND COMPOSITION OF GAAS(001) SURFACES

被引：92
|
作者：
FALTA, J
TROMP, RM
COPEL, M
PETTIT, GD
KIRCHNER, PD
机构：
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.69.3068
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The structure and composition of the GaAs(001) surface was studied with high-resolution medium-energy ion scattering, from As-rich to Ga-rich reconstructions. In contrast to commonly accepted models, we find that first and second layers in the surface may contain both Ga and As atoms. The surfaces are more Ga-rich than previously believed, with Ga atoms occupying As sites. Such mixed compositions are explained by consideration of charge neutrality, as well as Coulomb repulsion between surface electrons. Implications for heteroepitaxial growth on GaAs(001) are discussed.
引用
收藏
页码：3068 / 3071
页数：4
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