OHMIC CONTACT FORMATION ON GAAS-LAYERS WITH LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL CAPS

被引：4
|
作者：
LOOK, DC [1 ]
YAMAMOTO, H [1 ]
NAKANO, K [1 ]
机构：
[1] WRIGHT LAB,ERL,WRIGHT PATTERSON AFB,OH 45433
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 05期
关键词：
D O I：
10.1109/16.129112
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Molecular-beam epitaxial GaAs layers, grown at 200 or 400-degrees-C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n congruent-to 1.6 x 10(17) cm-3) grown at normal temperatures (580-600-degrees-C). Here we show that ohmic contacts, with specific contact resistances of 10(-6) OMEGA.cm2, are easily fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p congruent-to 1.5 x 10(17) cm-3) suggest that a 200-degrees cap may degrade the contact resistance by a factor of 3-10.
引用
收藏
页码：1237 / 1239
页数：3
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