Strain and stress analysis of the oxide film surface in the chemical mechanical polishing process

被引:0
|
作者
Lin, Yeou-Yih [1 ]
Lo, Ship-Peng [1 ]
Chen, Cheng-Yung [1 ]
机构
[1] De Lin Inst Technol, Dept Mech Engn, 1,380 LN,Chin Yung Rd, Taipei, Taiwan
关键词
finite element method; non-uniformity; oxide film; strain; stress;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
A two-dimensional axisymmetric quasi-static finite element model for a chemical mechanical polishing (CMP) process of 12'' wafer was established. The strain, stress and non-uniformity of oxide film surface are examined. The findings indicate that the axial strain was the maximum in strain components and its peak occurred at the end, the axial stress had a similar trend as the axial strain, and the elastic modulus and the thickness of the pad and carrier load would significantly affect the axial strain, the von Mises stress and the non-uniformity, but those of the film have little effect.
引用
收藏
页码:233 / 241
页数:9
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