BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：16
|
作者：
HAYES, JR [1 ]
LEVI, AFJ [1 ]
GOSSARD, AC [1 ]
ENGLISH, JH [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期
关键词：
D O I：
10.1063/1.97309
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1481 / 1483
页数：3
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