KINETICS OF EPITAXIAL-GROWTH OF GAN USING GA, HCL AND NH3

被引：45
|
作者：
SHINTANI, A [1 ]
MINAGAWA, S [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1974年 / 22卷 / 01期
关键词：
D O I：
10.1016/0022-0248(74)90050-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1 / 5
页数：5
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