LATERAL SUBBAND TRANSITIONS IN THE LUMINESCENCE SPECTRA OF A ONE-DIMENSIONAL ELECTRON-HOLE PLASMA IN IN0.53GA0.47AS/INP QUANTUM WIRES

被引:17
|
作者
ILS, P [1 ]
FORCHEL, A [1 ]
WANG, KH [1 ]
PAGNODROSSIAUX, P [1 ]
GOLDSTEIN, L [1 ]
机构
[1] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 16期
关键词
D O I
10.1103/PhysRevB.50.11746
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In0.53Ga0.47As/InP quantum wires with widths down to about 10 nm have been investigated by high-excitation luminescence spectroscopy. The one-dimensional electron-hole plasma spectra of quantum wires with widths between 50 and 30 nm exhibit shoulders on the high-energy edge of the emission. With decreasing quantum-wire widths the shoulders shift consistently to higher energy. The low- and high-energy features are identified by model calculations with the first, second, and third lateral-subband transitions in the structures. A simple model based on a square-well confinement by the semiconductor vacuum interface and the measured widths of the structures is in quantitative agreement with the experimental data. © 1994 The American Physical Society.
引用
收藏
页码:11746 / 11749
页数:4
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