ION-BEAM ASSISTED ETCHING FOR GAAS DEVICE APPLICATIONS

被引：32

作者：

LINCOLN, GA

GEIS, MW

MAHONEY, LJ

CHU, A

VOJAK, BA

NICHOLS, KB

PIACENTINI, WJ

EFREMOW, N

LINDLEY, WT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：786 / 789

页数：4

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