SILICON ANODIC-PLASMA OXIDATION DURING MAGNETRON SPUTTERING OF YTTRIA-STABILIZED ZIRCONIA

被引：5
|
作者：
BESHENKOV, VG
MARCHENKO, VA
ZNAMENSKII, AG
机构：
[1] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期
关键词：
D O I：
10.1063/1.112657
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The floating potential V(f) was shown to vary in space and time during YSZ (yttria-stabilized zirconia) magnetron deposition onto Si. The V(f) gradient causes the substrate to become positively charged with respect to the equilibrium floating potential and undergo anodic-plasma oxidation. Biasing the substrate below the floating potential suppresses SiO2 growth during YSZ film deposition.
引用
收藏
页码：156 / 158
页数：3
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