HIGH-BRIGHTNESS LOW-VOLTAGE MESA STYLE ZNSE LIGHT-EMITTING-DIODES

被引：2
|
作者：
RENNIE, J
ONOMURA, M
NISHIKAWA, Y
SAITO, S
PARBROOK, PJ
NITTA, K
ISHIKAWA, M
HATAKOSHI, G
机构：
[1] Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, I Komukai, Toshiba-cho
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 13期
关键词：
II-VI-SEMICONDUCTORS; LIGHT EMITTING DIODES;
D O I：
10.1049/el:19940717
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have developed a ZnSe based blue-green (500m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200muW (3cd) for a current of 30mA, under an operating voltage of 8.6V, and had a record efficiency of 0.26%.
引用
收藏
页码：1090 / 1091
页数：2
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