MODELING OF SUBMICROMETER GATE FIELD-EFFECT TRANSISTORS

被引：0
|
作者：
CARNEZ, B
CAPPY, A
CAPPY, A
SALMER, G
CONSTANT, E
机构：
来源：
ACTA ELECTRONICA | 1980年 / 23卷 / 02期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：165 / 183
页数：19
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