EFFECTS OF INERT-GAS PURITY ON TI SILICIDE FILMS

被引：0
|
作者：
BERGER, H
LIN, SY
机构：
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C120 / C120
页数：1
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