EFFECTS OF INERT-GAS PURITY ON TI SILICIDE FILMS

被引：0

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作者：

BERGER, H

LIN, SY

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：C120 / C120

页数：1

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