CHARGES ON OXIDIZED SILICON SURFACES

被引：40
|
作者：
SHOCKLEY, W
QUEISSER, HJ
HOOPER, WW
机构：
来源：
PHYSICAL REVIEW LETTERS | 1963年 / 11卷 / 11期
关键词：
D O I：
10.1103/PhysRevLett.11.489
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：489 / &
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