INFLUENCE OF BARRIER HEIGHT DISTRIBUTION ON THE PARAMETERS OF SCHOTTKY DIODES

被引：176

作者：

DOBROCKA, E ^{[1
]}

OSVALD, J ^{[1
]}

机构：

[1] SLOVAK ACAD SCI,INST ELECT ENGN,CS-84239 BRATISLAVA,SLOVAKIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

I-V curves of Schottky diodes are simulated for a Gaussian type of the Schottky barrier height (SBH) distribution using the model of noninteracting parallel diodes. The mean value and the standard deviation of the distribution are supposed to be constant, i.e., not dependent on the voltage and the temperature. The influence of the distribution parameters and the temperature on the apparent barrier height and the ideality factor is analyzed. It is shown that the ideality factor increases and the apparent barrier height decreases with increasing standard deviation and decreasing temperature. The simulation also provides a rough estimate for the standard deviation. Values of approximately 0.09 V can result in ideality factors up to 1.2. The importance of the effect of series resistance in the approach of noninteracting diodes is emphasized.

引用

页码：575 / 577

页数：3

共 50 条

[21] Influence of lateral current spreading on the apparent barrier parameters of inhomogeneous Schottky diodes
Osvald, J
JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)
[22] The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures
Tataroglu, A.
Altindal, S.
Pur, F. Z.
Ataseven, T.
Sezgin, S.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (3-4): : 438 - 442
[23] Barrier height of Ga-pSi(p) Schottky diodes
Patel, K.D.
Modi, B.P.
Srivastava, R.
Diffusion and Defect Data Pt.B: Solid State Phenomena, 1997, 55 : 183 - 185
[24] BARRIER HEIGHT DIMINUTION IN SCHOTTKY DIODES DUE TO ELECTROSTATIC SCREENING
PERLMAN, SS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 450 - &
[25] THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES
WU, CY
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2909 - 2912
[26] ON THE BARRIER HEIGHT OF AL/P-SI SCHOTTKY DIODES
IOANNOU, DE
HUANG, YJ
MCLARTY, PK
JOHNSON, SM
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K223 - K226
[27] BARRIER HEIGHT STUDY ON AU-INP SCHOTTKY DIODES
HESS, JM
NGUYEN, PH
LEPLEY, B
RAVELET, S
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (01): : K55 - K59
[28] ON THE BARRIER HEIGHT OF SCHOTTKY DIODES OF AU ON NORMAL-GASB
MURAWALA, PA
ARORA, BM
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2434 - L2437
[29] Barrier height of Ga-pSi(p) Schottky diodes
Patel, KD
Modi, BP
Srivastava, R
SOLID STATE PHENOMENA, 1997, 55 : 183 - 185
[30] ENHANCEMENT OF THE SCHOTTKY-BARRIER HEIGHT OF AU/ZNSSE DIODES
WANG, AZ
ANDERSON, WA
APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1963 - 1965

← 1 2 3 4 5 →