The electrical conductibility of the metal in the deepest temperatures (According to the discoveries of Kamerlingh Onnes)

被引:0
|
作者
Mahlke, A
机构
关键词
D O I
10.1007/BF01507639
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:963 / 966
页数:4
相关论文
共 40 条
  • [31] Electrical properties of organic field effect transistors with thin graphite/metal electrode directly grown by ICP-CVD at low temperatures
    Choi, Jinwoo
    Seo, Young-Soo
    Lee, Wan-Gyu
    Jung, Jongwan
    CURRENT APPLIED PHYSICS, 2013, 13 (07) : 1275 - 1279
  • [32] MODEL OF TRANSVERSE ELECTRICAL-CONDUCTIVITY OF METAL MATRIX COMPOSITES ABOVE LIQUID-NITROGEN TEMPERATURES .1. REGULAR ARRAYS OF FIBERS
    SCHOUTENS, JE
    ROIG, FS
    JOURNAL OF MATERIALS SCIENCE, 1987, 22 (01) : 181 - 188
  • [33] METAL-NONMETAL TRANSITION IN AMORPHOUS SI-AU SYSTEM AT LOW-TEMPERATURES - MEASUREMENTS OF ELECTRICAL-CONDUCTIVITY AND THERMOELECTRIC-POWER
    KISHIMOTO, N
    MORIGAKI, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (03) : 846 - 854
  • [34] Evaluation of the optical and electrical properties of (C8BTBT)(F4TCNQ) charge-transfer complexes according to film formation temperatures during solution coating
    Uchiyama, Naomi
    Matsuura, Yuji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (12)
  • [35] Evaluation of the optical and electrical properties of (C8BTBT)(F4TCNQ) charge-transfer complexes according to film formation temperatures during solution coating
    Uchiyama, Naomi
    Matsuura, Yuji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2024, 63 (12):
  • [36] Electrical and chemical analysis of zinc oxide interfaces with high dielectric constant barium tantalate and aluminum oxide in metal-insulator-semiconductor structures fabricated at Low temperatures
    Kuo, Fang-Ling
    Maneshian, Mohammad H.
    Shepherd, Nigel D.
    THIN SOLID FILMS, 2011, 520 (01) : 475 - 480
  • [37] Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
    Trinh, Hai-Dang
    Lin, Yueh-Chin
    Wang, Huan-Chung
    Chang, Chia-Hua
    Kakushima, Kuniyuki
    Iwai, Hiroshi
    Kawanago, Takamasa
    Lin, Yan-Gu
    Chen, Chi-Ming
    Wong, Yuen-Yee
    Huang, Guan-Ning
    Hudait, Mantu
    Chang, Edward Yi
    APPLIED PHYSICS EXPRESS, 2012, 5 (02)
  • [38] Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO2 on n-InAs/InGaAs Metal-oxide-semiconductor capacitors
    Trinh, Hai-Dang
    Lin, Yueh-Chin
    Wang, Huan-Chung
    Chang, Chia-Hua
    Kakushima, Kuniyuki
    Iwai, Hiroshi
    Kawanago, Takamasa
    Lin, Yan-Gu
    Chen, Chi-Ming
    Wong, Yuen-Yee
    Huang, Guan-Ning
    Hudait, Mantu
    Chang, Edward Yi
    Applied Physics Express, 2012, 5 (02):
  • [39] ELECTRICAL-CONDUCTIVITY OF TRANSITION-METAL OXIDE GLASSES IN THE SYSTEM V2O5-B2O3-TEO2 AT HIGH-TEMPERATURES
    DIXIT, VG
    SINGH, K
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (09) : 859 - 864
  • [40] Electrical properties of Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications
    Xian, Cheng-Ji
    Park, Jong-Hyun
    Ahn, Kyung-Chan
    Yoon, Soon-Gil
    Lee, Jeong-Won
    Kim, Woon-Chun
    Lim, Sung-Taek
    Sohn, Seung-Hyun
    Moon, Jin-Seok
    Jung, Hyung-Mi
    Lee, Seung-Eun
    Lee, In-Hyung
    Chung, Yul-Kyo
    Jeon, Min-Ku
    Woo, Seong-Ihl
    APPLIED PHYSICS LETTERS, 2007, 90 (05)