CAD FOR REALIZATION OF AN IMPURITY DISTRIBUTION IN A SEMICONDUCTOR

被引：0
|
作者：
NAKAMURA, T [1 ]
NISHIZAW.J [1 ]
机构：
[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI 980,JAPAN
来源：
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1972年 / 55卷 / 12期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：90 / 96
页数：7
相关论文
共 50 条
  • [1] CAD FOR REALIZATION OF AN IMPURITY DISTRIBUTION IN A SEMICONDUCTOR.
    Nakamura, Tadao
    Nishizawa, Jun-ichi
    1600, (55):
  • [2] Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band
    M. I. Daunov
    I. K. Kamilov
    A. B. Magomedov
    Journal of Experimental and Theoretical Physics, 1997, 84 : 309 - 316
  • [3] Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band
    Daunov, MI
    Kamilov, IK
    Magomedov, AB
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1997, 84 (02) : 309 - 316
  • [4] The Schottky Barrier at Homogeneous Impurity Distribution in a Semiconductor
    Bondarenko, V. B.
    Filimonov, A. V.
    Koroleva, E. Yu
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2010, 4 (05) : 859 - 861
  • [5] Convection in melts and impurity distribution in semiconductor crystals
    P. K. Volkov
    B. G. Zakharov
    Yu. A. Serebryakov
    Crystallography Reports, 2000, 45 : 862 - 870
  • [6] The Schottky barrier at homogeneous impurity distribution in a semiconductor
    V. B. Bondarenko
    A. V. Filimonov
    E. Yu. Koroleva
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2010, 4 : 859 - 861
  • [7] IMPURITY DISTRIBUTION OVER SUBLATTICES IN SEMICONDUCTOR COMPOUNDS
    VEKILOV, YK
    GORBATOV, OI
    LASHKEVICH, MY
    RUBAN, AV
    FIZIKA TVERDOGO TELA, 1994, 36 (02): : 301 - 308
  • [8] Convection in melts and impurity distribution in semiconductor crystals
    Volkov, PK
    Zakharov, BG
    Serebryakov, YA
    CRYSTALLOGRAPHY REPORTS, 2000, 45 (05) : 862 - 870
  • [9] POSSIBILITY OF OBTAINING A PRESCRIBED IMPURITY DISTRIBUTION IN A SEMICONDUCTOR BY DIFFUSION
    RODOV, VI
    KHAIKIN, BL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1328 - 1329
  • [10] REALIZATION OF EFFECT OF NONUNIFORM DISTRIBUTION IN SEMICONDUCTOR NULL NETWORKS
    TOBA, Y
    MANO, K
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (02) : 182 - 184
12345