Convection in melts and impurity distribution in semiconductor crystals

被引：5

作者：

Volkov, PK ^{[1
]}

Zakharov, BG ^{[1
]}

Serebryakov, YA ^{[1
]}

机构：

[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Space Mat Res Ctr, Kaluga 248640, Moscow Oblast, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2000年 / 45卷 / 05期

关键词：

Crystallization; Convection; Mass Transfer; Space Condition; Convective Flow;

D O I：

10.1134/1.1312937

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Impurity distributions in semiconductor melts and crystals grown from these melts ore experimentally and numerically studied on an example of Ga-doped Ge crystals. It is shown that inhomogeneous dopant distribution is observed in the form of striations and is caused by the convective flows in the melt and their nonstationary rearrangement in the vicinity of the crystallization front. The character of heat and mass transfer under the microgravity conditions is predicted. The necessity of precision experiments under terrestrial and, especially, space conditions is emphasized. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：862 / 870

页数：9

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