OPTICAL CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIAL OBTAINED BY SEQUENTIAL IMPLANTATION AND ANNEALING

被引：5
|
作者：
PEREZ, A [1 ]
SAMITIER, J [1 ]
CORNET, A [1 ]
MORANTE, JR [1 ]
HEMMENT, PLF [1 ]
HOMEWOOD, KP [1 ]
机构：
[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 23期
关键词：
D O I：
10.1063/1.104178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical characterization of silicon-on-insulator structures formed by sequential implantation and annealing (SIA) has been carried out. The infrared transmission spectra show peaks characteristic of a thermal oxide, and confirm the high quality of the buried oxide. Moreover, the spectra obtained from these SIA samples, in comparison to those obtained from equivalent samples made with a single implant, show a shift of the main absorption peak to higher wave numbers, which can be attributed to excess oxygen. The higher concentration of oxygen in the SIA samples is corroborated by photoluminescence measurements which show the presence of dislocation-related bands broadened by the presence of oxygen.
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收藏
页码：2443 / 2445
页数：3
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