共 50 条
- [27] GROWTH OF GAAS AT DIFFERENT SUPERSATURATIONS IN GAAS-ASCL3-H2 VAPOR-DEPOSITION SYSTEM .3. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1978, (05): : 23 - 27
- [29] ASH3 PREEXPOSURE CONDITIONS FOR GAAS EPITAXIAL-GROWTH ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04): : L534 - L536