DETERMINATION OF ABSOLUTE RATE CONSTANTS FOR CAPTURE OF THERMAL ELECTRONS BY CCL4, SF6, C4F8, C7F14, N2F4 AND NF3

被引：24

作者：

MOTHES, KG

SCHINDLE.RN

机构：

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE | 1971年 / 75卷 / 09期

关键词：

D O I：

10.1002/bbpc.19710750916

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：938 / &

共 50 条

[1] EXPERIMENTAL DETERMINATION OF RATE CONSTANTS FOR THERMAL ELECTRON ATTACHMENT TO GASEOUS SF6 AND C7F14
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[5] Comparison of deep silicon etching using SF6/C4F8 and SF6/C4F6 plasmas in the Bosch process
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[7] GASEOUS THERMAL ELECTRON REACTIONS - ATTACHMENT TO SF6 AND C7F14
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[10] DIELECTRIC STRENGTH OF GAS-MIXTURES COMPRISING SF6,CO,C-C4-F8 AND SF6,N2,C-C4F8
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