A STUDY OF DOPANTS FOR INSB AND INAS1-XSBX GROWN BY MOCVD

被引：0
|
作者：
BIEFELD, RM [1 ]
FRITZ, IJ [1 ]
ZIPPERIAN, TE [1 ]
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：297 / 298
页数：2
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