THE STATE OF CS ON NEGATIVE ELECTRON-AFFINITY SURFACES

被引:9
|
作者
MIYAO, M
WADA, T
NITTA, T
HAGINO, M
机构
关键词
D O I
10.1016/0169-4332(88)90328-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:364 / 369
页数:6
相关论文
共 50 条
  • [41] Semiconductor surfaces with negative electron affinity
    Bakin, V. V.
    Pakhnevich, A. A.
    Zhuravlev, A. G.
    Shornikov, A. N.
    Akhundov, I. O.
    Tereshechenko, O. E.
    Alperovich, V. L.
    Scheibler, H. E.
    Terekhov, A. S.
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2007, 5 : 80 - 88
  • [42] NEGATIVE-ION PROPERTIES OF TETRACYANOQUINODIMETHAN - ELECTRON-AFFINITY AND COMPOUND STATES
    COMPTON, RN
    COOPER, CD
    JOURNAL OF CHEMICAL PHYSICS, 1977, 66 (10): : 4325 - 4329
  • [43] PHOTOEMISSION-STUDIES OF DIAMOND(111) - NEGATIVE ELECTRON-AFFINITY EMITTER
    EASTMAN, DE
    HIMPSEL, FJ
    KNAPP, JA
    VANVECHTEN, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 403 - 403
  • [44] DETERMINATION OF PARAMETERS OF NEGATIVE ELECTRON-AFFINITY EMITTERS USING PHOTOEMISSION CHARACTERISTICS
    YASNOPOLSKY, NL
    BALASHOVA, AP
    YATSENKO, LE
    RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (10): : 2219 - 2220
  • [45] WORK FUNCTION OF PHOTOCATHODES WITH NEGATIVE ELECTRON-AFFINITY ON BASIS OF GAINAS COMPOUNDS
    KOROTKIKH, VL
    KORINFSKU, AD
    MATYASH, AA
    MUSATOV, AL
    STRELCHENKO, SS
    TITOV, VA
    FIZIKA TVERDOGO TELA, 1977, 19 (10): : 2869 - 2871
  • [46] SELECTIVE EMISSION OF ELECTRONS FROM PATTERNED NEGATIVE ELECTRON-AFFINITY CATHODES
    SANTOS, EJP
    MACDONALD, NC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (04) : 607 - 611
  • [47] ELECTRON-AFFINITY TO DIELECTRIC LATTICE
    CHITNIS, U
    YAGODOVSKII, VD
    ZHURNAL FIZICHESKOI KHIMII, 1981, 55 (06): : 1577 - 1579
  • [48] ELECTRON-AFFINITY FOR INTRINSIC SEMICONDUCTORS
    NEVOLIN, VK
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (09): : 76 - 80
  • [49] ELECTRON-AFFINITY OF MALEIC ANHYDRIDES
    NALETOVA, GP
    STOTSKAYA, LL
    MONAKOVA, DD
    ZHURNAL OBSHCHEI KHIMII, 1981, 51 (03): : 672 - 678
  • [50] PHOTOEMISSION FROM GAAS WITH NEGATIVE ELECTRON-AFFINITY FOR DIFFERENT DOPING LEVELS
    DENISOV, VP
    KLIMIN, AI
    FIZIKA TVERDOGO TELA, 1990, 32 (06): : 1754 - 1760