VISIBLE-LIGHT EMISSION AT ROOM-TEMPERATURE FROM PECVD A-SI-H-O

被引：0
|
作者：
DU, JF [1 ]
WAN, T [1 ]
ZHOU, B [1 ]
机构：
[1] NANJING UNIV,DEPT PHYS,NANJING 210008,PEOPLES R CHINA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 166卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report in this paper the observation of visible photoluminescence at room temperature from a-Si:H:O films prepared by the conventional PECVD technique at two kinds of process: a normal and an alternation of hydrogen plasma treatment and deposition. It has been discovered that the PL intensity of the films from the alternating mode is about ten times stronger than that from the normal one. Infrared absorption spectroscopy revealed that the concentration of oxygen rather than hydrogen was increased by H-2 plasma treatment. The enhancement of PL could be associated with the addition of the characteristic oxygen-related configuration as partially oxidized (SiH2)(x) or Sill.
引用
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页码：945 / 948
页数：4
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