EFFECT OF CESIUM AND BARIUM ION-IMPLANTATION ON EMISSION ADSORPTION PROPERTIES OF MO(110)

被引：0
|
作者：
GUSEVA, MI
KORYUKIN, VA
OBREZUMOV, VP
机构：
来源：
SOVIET ATOMIC ENERGY | 1992年 / 72卷 / 02期
关键词：
D O I：
10.1007/BF01121094
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
[No abstract available]
引用
收藏
页码：167 / 170
页数：4
相关论文
共 50 条
  • [31] IMPROVEMENT OF THE CORROSION PROPERTIES OF METALS BY ION-IMPLANTATION
    RADJABOV, TD
    VACUUM, 1988, 38 (11) : 979 - 985
  • [32] STRUCTURE AND PROPERTIES OF POLYMERS MODIFIED BY ION-IMPLANTATION
    SVORCIK, V
    RYBKA, V
    MICEK, I
    POPOK, V
    JANKOVSKIJ, O
    HNATOWICZ, V
    KVITEK, J
    EUROPEAN POLYMER JOURNAL, 1994, 30 (12) : 1411 - 1415
  • [33] MODIFICATION OF MECHANICAL-PROPERTIES BY ION-IMPLANTATION
    HERMAN, H
    HU, WW
    CLAYTON, CR
    HIRVONEN, JK
    KANT, R
    MACCRONE, RK
    THIN SOLID FILMS, 1980, 73 (01) : 189 - 191
  • [34] ALTERATION OF MECHANICAL-PROPERTIES BY ION-IMPLANTATION
    HOHMUTH, K
    KOLITSCH, A
    RAUSCHENBACH, B
    RICHTER, E
    NEUE HUTTE, 1984, 29 (05): : 174 - 178
  • [35] ADSORPTION AND ELECTRONIC EMISSION OF DOUBLE FILMS OF BARIUM AND CESIUM FLUORIDE ON TUNGSTEN
    OVCHINNI.AP
    TSAREV, BM
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1970, (04): : 753 - &
  • [36] ARSENIC ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION
    ANGELUCCI, R
    SOLMI, S
    ARMIGLIATO, A
    GABILLI, E
    GOVONI, D
    MERLI, M
    POGGI, A
    SOLID-STATE ELECTRONICS, 1992, 35 (07) : 941 - 947
  • [37] BORON ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION
    ANGELUCCI, R
    SOLMI, S
    ARMIGLIATO, A
    GUERRI, S
    MERLI, M
    POGGI, A
    CANTERI, R
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 3962 - 3967
  • [38] EFFECT OF ION-IMPLANTATION ON ALUMINUM VOID SUPPRESSION
    KIKKAWA, T
    ENDO, N
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) : 2505 - 2509
  • [39] EFFECT OF ION-IMPLANTATION ON BUBBLE TRANSLATION VELOCITY
    KONISHI, S
    HSU, T
    BROWN, BR
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1894 - 1896
  • [40] THE EFFECT OF ION-IMPLANTATION ON THE PITTING RESISTANCE OF ALUMINUM
    NATISHAN, PM
    HUBLER, GK
    MCCAFFERTY, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C302 - C302
12345