NONEQUILIBRIUM CARRIER RECOMBINATION CHANNELS IN UNIAXIALLY STRESSED GAPLESS SEMICONDUCTORS

被引：1
|
作者：
BAKHANOVA, EV
STRIKHA, MV
VASKO, FT
机构：
[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1991年 / 164卷 / 01期
关键词：
D O I：
10.1002/pssb.2221640116
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nonequilibrium carrier interband recombination channels such as radiative recombination, transitions with optical phonon emission, and Auger recombination are studied in uniaxially compressed gapless semiconductors. Energy ranges for radiative and phonon recombination are determined. The recombination process with phonon emission, the most efficient at low pressures, is dramatically suppressed when the gap becomes wider then the optical phonon energy. Energy threshold dependences are discussed for the cc --> cv Auger process (the recombination energy is carried by a free electron) and for the cv --> vv process (the energy is carried by a free hole). Temperature and concentration dependences of the recombination rates for these channels are obtained.
引用
收藏
页码：157 / 172
页数：16
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