SENSITIVITY OF GE-GAAS HETEROSTRUCTURES TO VACUUM ULTRAVIOLET-RADIATION

被引：0
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作者：
MAKAROV, OA
NEIZVESTNYI, IG
SINYUKOV, MP
SUPRUN, SP
SHUMSKII, VN
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：648 / 650
页数：3
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