SILICON AMORPHIZATION BY ION-BEAM WITH RADIATION HEATING

被引：2
|
作者：
DANILIN, AB [1 ]
DVURECHENSKII, AV [1 ]
RYAZANTSEV, IA [1 ]
TIMOFEEV, PA [1 ]
VERNER, VD [1 ]
机构：
[1] ACAD SCI USSR,INST SEMICOND PHYS,NOVOSIBIRSK,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 65卷 / 02期
关键词：
D O I：
10.1002/pssa.2210650206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：453 / 461
页数：9
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