ELECTROMAGNETIC-RADIATION OF MEV ELECTRONS IN THICK ALIGNED SINGLE-CRYSTALS

被引：1

作者：

DABAGOV, SB ^{[1
]}

KUMAKHOV, MA ^{[1
]}

机构：

[1] I V KURCHATOV ATOM ENERGY INST,MOSCOW 123182,RUSSIA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 125卷 / 1-3期

关键词：

CHANNELING RADIATION; THICK SILICON CRYSTALS; PROTON EMISSION;

D O I：

10.1080/10420159308225482

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Earlier published theoretical models for MeV electrons are generalized in this paper. Different theoretical predictions for planar channeling and accompanying electromagnetic radiation in thick crystals are presented. A comparative analysis of theoretical and experimental spectra of photon radiation is given. Thickness dependences of channeling quantum state populations, radiation line broadening and photon flux intensities are obtained. The existence of planar electron channeling at 54 MeV in a silicon single crystal with a thickness of several millimetres is shown.

引用

页码：55 / 65

页数：11

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