FERROELECTRIC BISMUTH TITANATE SUPERCONDUCTOR (Y-BA-CU-O) THIN-FILM HETEROSTRUCTURES ON SILICON

被引：55
|
作者：
RAMESH, R
INAM, A
WILKENS, B
CHAN, WK
SANDS, T
TARASCON, JM
FORK, DK
GEBALLE, TH
EVANS, J
BULLINGTON, J
机构：
[1] STANFORD UNIV,STANFORD,CA 94305
[2] RADIANT TECHNOL,ALBUQUERQUE,NM 87106
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期
关键词：
D O I：
10.1063/1.106199
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0-degrees-1.2-degrees for the bismuth titanate layer and 0.6-degrees-0.8-degrees for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45-degrees to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.
引用
收藏
页码：1782 / 1784
页数：3
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