POLARIZATION DEPENDENCE OF A 1.52-MU-M INGAAS/INP MULTIPLE QUANTUM-WELL WAVE-GUIDE ELECTROABSORPTION MODULATOR

被引：7

作者：

PAPPERT, SA ^{[1
]}

ORAZI, RJ ^{[1
]}

VU, TT ^{[1
]}

LIN, SC ^{[1
]}

CLAWSON, AR ^{[1
]}

YU, PKL ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 04期

关键词：

Electrooptical Devices - Laser Beams--Modulators - Semiconducting Indium Compounds--Thin Films - Waveguides; Optical;

D O I：

10.1109/68.53254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ridge-waveguide In0.53Ga0.47As/InP multiple quantum well (MQW) electroabsorption modulator operating at a wavelength of 1.52 μm is demonstrated. This modulator exhibits large polarization dependent electroabsorption behavior which favors the modulation of the TM mode. At a reverse bias of 10 V, the modulator has a 24.5 dB extinction ratio for the TM mode while that for the TE mode is only 11.1 dB. Polarization dependent saturation of absorption has been observed in this device for incident optical power levels of less than 1 mW. © 1990 IEEE

引用

页码：257 / 259

页数：3

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