MAGNETOTRANSPORT IN NARROW IN0.53GA0.47AS/INP WIRES

被引：13
|
作者：
MENSCHIG, A
FORCHEL, A
ROOS, B
GERMANN, R
PRESSEL, K
HEURING, W
GRUTZMACHER, D
机构：
[1] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY
[2] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 17期
关键词：
D O I：
10.1063/1.104058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated dry etched In0.53Ga0.47As quantum wires with geometrical widths varying from 80 nm to 50 μm from modulation-doped heterostructures. All wires show finite resistances even at 40 mK without illumination. The magnetotransport measurements show clearly the depopulation of one-dimensional subbands, universal conductance fluctuations, and an anomalous magnetoresistance peak.
引用
收藏
页码：1757 / 1759
页数：3
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