EVIDENCE FOR 1/F NOISE IN-DIFFUSION CURRENT DUE TO INSULATOR TRAPPING AND SURFACE RECOMBINATION VELOCITY FLUCTUATIONS

被引：2

作者：

SCHIEBEL, RA

BLANKS, D

BARTHOLOMEW, D

KINCH, MA

机构：

[1] Central Research Laboratories, Texas Instruments Inc., Dallas, 75265, TX

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 08期

关键词：

DEVICE MODELING; HGCDTE; INSULATOR TRAPPING; 1/F NOISE;

D O I：

10.1007/BF02817528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present evidence for 1/f noise in diode diffusion current due to fluctuations in surface recombination velocity caused by insulator trapping. Using a unique structure consisting of a thin HgCdTe film with a pn junction on one side and an insulated gate on the other, we demonstrate that the noise measured in the junction is a strong function of the surface potential on the opposite side of the film. We compare the results to model predictions, finding good qualitative agreement.

引用

页码：1081 / 1085

页数：5

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