BAND-STRUCTURE INVESTIGATION ON P-TYPE SILICON INVERSION LAYERS BY PIEZORESISTANCE AND MOBILITY MEASUREMENTS

被引：10

作者：

DORDA, G

FRIEDRICH, H

PREUSS, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.1317774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：759 / +

页数：1

共 8 条

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BATE, RT ;

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[2] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J].

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DORDA, G .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :406-&

[4] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J].

HENSEL, JC ;

FEHER, G .

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[5] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J].

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JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) :906-&

[6] EFFECTS OF CRYSTALLOGRAPHIC ORIENTATION ON MOBILITY SURFACE STATE DENSITY AND NOISE IN P-TYPE INVERSION LAYERS ON OXIDIZED SILICON SURFACES [J].

SATO, T ;

TAKEISHI, Y ;

HARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (05) :588-+

[7] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].

SMITH, CS .

PHYSICAL REVIEW, 1954, 94 (01) :42-49

[8] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

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