IMPROVING THE SENSITIVITY OF ELECTRIC-FIELD SENSOR WITH LINBO3 ELECTROOPTIC CRYSTALS BY LOADING INDUCTANCE

被引:0
|
作者
TAJIMA, K
AMEMIYA, F
KUWABARA, N
KOBAYASHI, R
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, TELECOMMUN NETWORKS LABS, MUSASHINO, TOKYO 180, JAPAN
[2] UNIV ELECTROCOMMUN, CHOFU, TOKYO 182, JAPAN
[3] NIPPON TELEGRAPH & TEL PUBL CORP, IBARAKI ELECT COMMUN RES LABS, MUSASHINO, TOKYO 180, JAPAN
关键词
ELECTROMAGNETIC INTERFERENCE; ELECTRIC FIELD SENSOR; ANTENNA MEASUREMENT; OPTICAL MEASUREMENT; ELECTROOPTIC EFFECT;
D O I
10.1002/ecja.4410771004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, with the diversification of electromagnetic compatibility(EMC) problems, the need for an electric field sensor to measure the electromagnetic pulses and the electric field near the equipment has increased greatly. An electric field sensor using LiNbO3, which has an electrooptical effect, has been used for such measurements; but the sensitivity is not satisfactory. However, the sensitivity can be improved by increasing the sensitivity of the optical modulator or by increasing the output of the optical modulator source. Here, we describe a method to improve the sensitivity at resonance frequency by loading inductance. First, an equivalent circuit representing the sensor with loading inductance is derived. Second, the frequency characteristics are analyzed theoretically by applying the moment method to this equivalent circuit and the improvement in sensitivity by loading inductance is demonstrated. Moreover, the validity of analysis is confirmed by performing the experiments using the GTEM-cell. As a result, it is found that the measured results show good agreement with the calculated results and the sensitivity can be improved by inductance loading. It has been confirmed that the sensitivity of the electric field sensor with element length of 150 mm could be improved by about 40 dB at 200 MHz by using the loading inductance of 600 nH.
引用
收藏
页码:39 / 48
页数:10
相关论文
共 50 条
  • [21] Experimental study of electric-field poling in LiNbO3 crystal by femtosecond laser carving
    Wang, Ying
    Ni, Xiao-Chang
    Xue, Ying-Hong
    Ji, Lei
    Sang, Mei
    Yu, Jian
    Wang, Qing-Yue
    Zhang, Zhi-Gang
    Zhongguo Jiguang/Chinese Journal of Lasers, 2005, 32 (12): : 1688 - 1692
  • [22] The research on the electric field sensor with no electrode in X-cut LiNbO3
    Zhang, FW
    Chen, FS
    Feng, L
    2002 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS AND WEST SINO EXPOSITION PROCEEDINGS, VOLS 1-4, 2002, : 1775 - 1778
  • [23] Thermal variation of electric field sensor bias caused by anisotropy of LiNbO3
    Wang, Hai
    Zeng, Rong
    Zhuang, Chijie
    APPLIED PHYSICS LETTERS, 2019, 114 (14)
  • [24] A Ti: LiNbO3 optical waveguide sensor for measurement of intensive electric field
    Zhang, Jiahong
    Chen, Qian
    OPTICS AND LASER TECHNOLOGY, 2024, 169
  • [25] Electric field measurement by a LiNbO3 probe
    Ciccarelli, L.
    Medugno, M.
    Rendina, I.
    PHOTONIC MATERIALS, DEVICES, AND APPLICATIONS II, 2007, 6593
  • [26] High accuracy and high sensitivity measurements of the electrooptic effect in undoped and MgO-doped LiNbO3 crystals
    Takizawa, Kuniharu
    Yokota, Yuji
    OPTICAL REVIEW, 2006, 13 (03) : 161 - 167
  • [27] High Accuracy and High Sensitivity Measurements of the Electrooptic Effect in Undoped and MgO-Doped LiNbO3 Crystals
    Kuniharu Takizawa
    Yuji Yokota
    Optical Review, 2006, 13 : 161 - 167
  • [28] Behavior of acoustic axes in LiNbO3 and SrTiO3 crystals in external electric field
    Zaitsev, BD
    Kuznetsova, IE
    Shuvalov, AL
    KRISTALLOGRAFIYA, 1996, 41 (06): : 1050 - 1053
  • [29] AN INTEGRATED-OPTICS CHANNEL SWITCH UTILIZING WAVEGUIDES IN LINBO3 INDUCED BY THE ELECTRIC-FIELD
    ZOLOTARYOV, VA
    MAKOVKIN, AV
    SMIRNOV, VL
    TARASOV, VP
    KVANTOVAYA ELEKTRONIKA, 1982, 9 (09): : 1907 - 1910