REDUCTION TECHNOLOGY OF ELECTRON AND HOLE TRAPPING DENSITIES IN THERMAL SIO2 FILM

被引：0

作者：

IWAMATSU, S ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] VLSI TECHNOL RES ASSOC,COOPERAT LABS,KAWASAKISHI 213,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C117 / C117

页数：1

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